MMBR931L transistor equivalent, silicon npn rf transistor.
*Designed primarily for use in low-power amplifiers to 1.0
GHz ,Ideal for pagers and other battery operated systems .
*Low Noise Figure
NF = 4.3 dB TYP. @VCE = 1 V, IE = 0.25 mA, f = 1 GHz
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed primarily for use in low-power amplifiers to 1.0
GHz ,Ideal .
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